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CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 1/8
MTDP4953Q8
Description
The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
* RDS(ON)=60m@VGS=-10V, ID=-5A RDS(ON)=90m@VGS=-4.5V, ID=-4A * Simple drive requirement * Low on-resistance * Fast switching speed * Pb-free package
Applications
* Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTDP4953Q8
Outline
SOP-8
GGate SSource DDrain
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 C Continuous Drain Current @TA=70 C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1)
Note : 1.Surface mounted on 1 in copper pad of FR-4 board, t10s. 2.Pulse width 300s, duty cycle2%
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 2/8
Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,ja
Limits -30 20 -5 -4 -20 2 0.02 -55~+150 -55~+150 62.5
Unit V V A A A W W / C C C C/W
(Note 1) (Note 1)
Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 V VGS=0, ID=-250A VGS(th) -1 -2.5 V VDS=VGS, ID=-250A IGSS 100 nA VGS=20V, VDS=0 IDSS -1 A VDS=-24V, VGS=0 60 ID=-5A, VGS=-10V *RDS(ON) m 90 ID=-4A, VGS=-4.5V *GFS 5 S VDS=-5V, ID=-5A Dynamic Ciss 582 pF VDS=-15V, VGS=0, f=1MHz Coss 125 Crss 86 *td(ON) 9 VDS=-15V, ID=-1A, *tr 10 ns VGS=-10V, RG=6, RD=15 *td(OFF) 37 *tf 23 *Qg 11.7 VDS=-15V, ID=-5A, nC *Qgs 2.1 VGS=-10V, *Qgd 2.9 Source-Drain Diode *VSD -0.84 -1.2 V VGS=0V, IS=-1.7A
*Pulse Test : Pulse Width 300s, Duty Cycle2%
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 3/8
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 4/8
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 5/8
Ordering Information
Device MTDP4953Q8 Package SOP-8 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 4953SS
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 6/8
Carrier Tape Dimension
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 7/8
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
SOP-8 Dimension
Top View A Right side View G
Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 8/8
Marking:
I B C H
Device Name Date Code
4953SS
J D Front View
Part A
E
Part A
K L N O
8-Lead SOP-8 Plastic Package CYStek Package Code: Q8
M
F
*: Typical
DIM A B C D E F G H
Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007
Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10
DIM I J K L M N O
Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059
Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: Pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP4953Q8
CYStek Product Specification

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